NDS356AP
Manufacturer:
On Semiconductor
Mfr.Part #:
NDS356AP
Datasheet:
Description:
MOSFETs SOT-23-3 SMD/SMT P-Channel number of channels:1 500 mW -30 V Continuous Drain Current (ID):1.1 A 4.4 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | -30 V |
| Width | 3.05 mm |
| Termination | SMD/SMT |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 300 mΩ |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Number of Elements | 1 |
| Current Rating | -1.1 A |
| Lifecycle Status | Production (Last Updated: 2 months ago) |
| Max Power Dissipation | 460 mW |
| Power Dissipation | 500 mW |
| Number of Channels | 1 |
| Input capacitance | 280 pF |
| Continuous Drain Current (ID) | 1.1 A |
| Rds On Max | 200 mΩ |
| Drain to Source Voltage (Vdss) | 30 V |
| Turn-On Delay Time | 8 ns |
| Turn-Off Delay Time | 53 ns |
| Element Configuration | Single |
| Fall Time | 17 ns |
| Rise Time | 17 ns |
| Dual Supply Voltage | -30 V |
| Gate Charge | 4.4 nC |
| Drain to Source Resistance | 200 mΩ |
| Nominal Vgs | -2 V |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | -30 V |
| Schedule B | 8541210080 |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 2 months ago) |
| Gate to Source Threshold Voltage | 2.5 V |
| FET Type(Transistor Polarity) | P-Channel |
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